- iHelium3χ
- Crystal Growth under Ultra Low Oxygen Partial Pressure
- New Quantum Phenomena
- Studies on Novel Superconductors
- Mechanism of High-Tc Superconductivity
- New Monte Carlo Simulation
- Dynamical Cluster Method
トピックス
Innovation
Crystal Growth under Ultra Low Oxyen Partial Pressure
We have succeeded to develope a method of crystal growth under ultra low oxygen partial pressure for less than 10 to -24 atom. Now it is possible to develop high-quality single crystals of oxide compounds by our method. For example,
- Mo oxides（SrMoO3, etc）.
- SrIrO3, SrRhO3, .....
- Si crystal.
Si crystal obtained under ultra low oxygen partial pressure.