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Intermediate Structures Appearing in the Phase Transition of Si(111)7~7 to (/3×/3)R30º Induced by HBO2 Molecular Irradiation

Abstract
@We have investigated the breakdown process of the 7~7 structure during its transition to the (/3~/3)R30 phase induced by HBO2 irradiation. The 7~7 structure was destroyed over the wide area before the nucleation of the (/3~/3)R30 phase. Even when the (/3~/3)R30 structure nucleated in the disordered area, disordered structure existed between the domains of the 7~7 and (/3~/3)R30 structural phases. The observed results are completely different from the (/3~/3)R30 formation processes induced by other group III atoms, where (/3~/3)R30 phases are formed as adjacent to the 7 ~ 7 structural domains. The surface B atom concentration in the 7~7, disordered, and (/3~/3)R30 regions were estimated to be about one, three, and six per 7~7 unit cell. The disordered structure remained on the surface even after annealing the sample at 750 and 900C. And the B concentration in the disordered region did not change. These results indicate that the disordered structure is an intrinsic nature of the B-induced reconstruction, and suggest the existence of the relationship between the B atom concentration and the stability of the 7~7 structure.
Results
ECharacteristic phase transition observed on the breakdown process of the 7~7 structure during its transition to the (/3×/3)R30º phase induced by HBO2 irradiation.

STM images of the surface formed by 3, 5, 20, 50 min. of HBO2 irradiation.
3 min.: Characteristic site preference of boron atoms
5 min.: Appearance of the disordered structure
20 min.: Ordering of the (/3×/3)R30º phase
50 min.: Completion of the (/3×/3)R30º phase

ERelationship between the surface B concentrations and the surface reconstructed structures
STM: Magunified image of the boundary between 7×7 and disordered structures.

Graph: The surface boron concentration (atoms per 7×7 unit cell size) in the 7×7, disordered, and (/3×/3)R30º regions.

ŠΦ˜A•ΆŒ£

  1. "Site Preferences of Oxygen and Boron Atoms during Dissociative Reaction of HBO2 Molecules onto the Si(111)-7×7 Surface"
    T. Kaikoh, K. Miyake, Y.J. Li, R. Morita, M. Yamashita, and H. Shigekawa
    Journal of Vacuum Science and Technology A 18, 1469-1472 (2000).

  2. "Intermediate structures appearing in the phase transition of Si(111)-7×7 to (/3×/3)R30º induced by HBO2 molecular irradiation"
    K. Miyake, T. Kaikoh, K. Hata, R. Morita, M. Yamashita, H. Shigekawa
    Journal of Vacuum Science and Technology A 17, 1596-1601 (1999).

  3. "Selective Chemical Reaction of HBO2 Molecules on the Si(111)-7×7 Surface Studied by Scanning Tunneling Microscopy"
    K. Miyake, M. Ishida, and H. Shigekawa
    Applied Surface Science 130-132, 78-83 (1998).

  4. "Self Organised Network Structure Appearing in the B/Si(111)-/3×/3 Phase Formation Process Studied by Scanning Tunneling Microscopy"
    K. Miyake, and H. Shigekawa
    Applied Physics 66, S1013-S1016 (1998).

  5. "STM Study of Si(111) /3×/3 R30º-B Surface Structure Formed by HBO2 Irradiation"
    K. Miyake, H. Shigekawa, R. Yoshizaki, T. Abe, T. Ozawa, and T. Nagamura
    Applied Surface Science 107, 63-67 (1996).