Kakuya IWATA

Personal

Contents

Name （氏名）

Kakuya IWATA （岩田拡也）

Photo （写真）

Office address （職場住所）

Central2, 1-1-1　Umezono, Tsukuba-city, Ibaraki, Japan, 305-8568
（〒305-8568　茨城県つくば市梅園1-1-1　つくば中央第２）

Phone number（電話番号）

+81-29-861-5612　（029-861-5612）

Fax number （ファックス番号）

+91-29-861-3388　（029-861-3388）

E-mail address（電子メールアドレス）

k.iwata(アットマーク）aist.go.jp

Birthday （誕生日）

7 September 1969 （1969年9月7日）

University

Blood type （血液型）

A

My Works

Titles

Works

3-demensional transportation robot(3DTR) study

K.Iwata, M. Onda and K. Komoriya
"UAV for Small Cargo Transportation."
AIAA Meeting Papers On Disc, 9-2784，pp.1-6、2007.

K.Iwata, M. Onda and K. Komoriya
"Aerial Robotic System for Transportation and Logistics."
Journal of Mechanical Systems for Transportation and Logistics(JMTL), Vol.1, No.1,(2008) pp.146-157.

K.Iwata
"Aerial Robotic System for Transportation and Logistics."
Cargo Handling JAPAN，Vol.52, No.2, (2007) pp.207-212.

ZnO II-VI Oxide semiconducter study

K.Iwata, P.Fons, S.Niki, A.Yamada, K.Matsubara and M. Watanabe
"Nitrogen induced defects in ZnO:N grown on sapphire substrate by gas source MBE."
J. Crystal Growth, 209 (2000) pp.526-531.

K.Iwata, P.Fons, A.Yamada, K.Matsubara and S.Niki
"ZnO growth on Si by radical source MBE."
J. Crystal Growth , 214/215 (2000) pp.50-54.

K.Iwata, P.Fons, A.Yamada, K.Matsubara, K. Nakahara, H. Takasu and S.Niki
"Improvement of Electrical Properties in ZnO Thin Films Grown by Radical source(RS)-MBE."
Physica Status Solidi (a) , Vol.180, No.1,(2000) p.287.

K.Iwata, P.Fons, A.Yamada, K.Matsubara, K. Nakahara, H. Takasu and S.Niki
"Bandgap Engineering of ZnO Using Se."
Physica Status Solidi (b) , Vol.229, No.2,(2002) pp.887-890.

Poly-crystal GaN optical emission device

K.Iwata, H.Asahi, S.J.Yu, K.Asami, H.Fujita, M.Fushida and S.Gonda
"High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2x2) and (4x4) Reflection High Energy Diffraction Patterns."
Jpn.J.Appl.Phys., 35 (1996) pp.L289-L292.

K.Iwata, H.Asahi, K.Asami and S.Gonda
"Gas Source Molecular Beam Epitaxy Growth of GaN on C-,A-,R-,M-plane Sapphire and Silica Glass Substrate."
Jpn.J.Appl.Phys., 36 (1997) pp.L661-L664.

K.Iwata, H. Asahi, K. Asami, R. Kuroiwa and S. Gonda
"Strong photoluminescence emission from GaN grown on amorphous silica substrates by gas source MBE."
J. Crystal Growth, 188 (1998) pp.98-102.

K.Iwata, H. Asahi, K. Asami, R. Kuroiwa, H. Tampo and S. Gonda
"Promising characteristics of GaN grown on amorphous silica substrates by gas source MBE."
J. Crystal Growth, (1998) in press.

GaN based compound semiconductor for optical emission device

K.Iwata, H.Asahi, K.Asami and S.Gonda
"Gas source Molecular Beam Epitaxy growth of GaN1-xPx(x<0.015) using Ion-Removed Electron Cyclotron Resonance radical cell."
Jpn.J.Appl.Phys., 35 (1996) pp.L1634-L1637.

R.Kuroiwa, H.Asahi,K.Iwata, S.J.Kim, J.H.Noh, K.Asami and S.Gonda
"Gas Source Molecular Beam Epitaxy growth of GaN-Rich Side of GaNP Alloy and Their Observation by Scanning Tunneling Microscopy."
Jpn.J.Appl.Phys., 36 (1996) pp.L3810-L3813.

K.Iwata, H.Asahi, K.Asami and S.Gonda
"Gas source Molecular Beam Epitaxy growth of GaN rich side of GaN1-xPx using Ion-Removed Electron Cyclotron Resonance radical cell."
J. Crystal Growth, 175 (1997) pp.150-155.
K.Iwata, H. Asahi, K. Asami, R. Kuroiwa and S. Gonda
"GaN-rich side of GaNAs grown by gas source MBE."
Jpn.J.Appl.Phys., 37(3B) (1998) pp.1436-1439.

Reserch for p-ZnSe electrode using InAlP

K.Iwata, H.Asahi, J.H.Kim, X.F.Liu, S.Gonda, Y.Kawaguchi, T.Matsuoka
"Gas source MBE growth of InAlP band offset reduction layer on p-type ZnSe."
J. Crystal Growth, 150 (1995) pp.833-837.

K.Iwata, H.Asahi, T.Ogura, J.Sumino, S.Gonda, A.Ohki, Y.Kawaguchi and T.Matsuoka
"Low temperature grown Be-doped InAlP band offset reduction layer to p-type ZnSe."
Journal of Electronic Materials, 25 (1996) pp.637-641.

Awards

Years

Awards

1997

EMS Award for Young Researcher

THE 16TH ELECTRONIC MATERIALS SYMPOSIUM 1997;

19 - 21 JUNE 1997, Osaka, Japan

2002

Young Scientist Award for the Presentation of an Excellent Paper

The 49th Spring Meeting, 2002; The Japan Society of Applied Physics and Related Societies

27 - 30 March 2002, Tokyo, Japan

2007

Transportation and Logistics Division, Certificate of Merit for Outstanding Presentation

日本機械学会交通・物流部門優秀論文講演表彰受賞　「空中物流ロボットの研究開発」

12 March 2007, Tokyo, Japan