·        - Mar 1995 Completed Master's program in Electromagnetic Energy Engineering, Graduate School of Engineering, Osaka University

·        - Mar 1998 Completed Doctoral program in Electromagnetic Energy Engineering, Graduate School of Engineering, Osaka University

·        - Mar 1998 Doctor of Engineering (Osaka University)1995.3 Osaka University Master

 

·        - Apr 1996 - Mar 1998 Research Fellow of the Japan Society for the Promotion of Science (DC2)

·        - Apr. 1998 - Mar. 2001 Electronics Research Institute, Agency of Industrial Science and Technology, Ministry of International Trade and Industry

·        - Apr. 2001 - Mar. 2008 National Institute of Advanced Industrial Science and Technology (AIST)

·        - Apr. 2008 - Mar. 2009 Director, Information Promotion Section, Industrial Machinery Division, Manufacturing Industries Bureau, Ministry of Economy, Trade and Industry

·        - Apr. 2009 - Present Senior Researcher, National Institute of Advanced Industrial Science and Technology (AIST)

 

１．Papers
1) "Gas source MBE growth of InAlP band offset reduction layer on p-type ZnSe." K.Iwata, H.Asahi, J.H.Kim, X.F.Liu, S.Gonda, Y.Kawaguchi, T.Matsuoka J. Crystal Growth, 150 (1995) pp.833-837.、1995/09

2) "Low temperature grown Be-doped InAlP band offset reduction layer to p-type ZnSe." K.Iwata, H.Asahi, T.Ogura, J.Sumino, S.Gonda, A.Ohki, Y.Kawaguchi and T.Matsuoka Journal of Electronic Materials, 25 , pp.637-641.、1996/04

3) "High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2x2) and (4x4) Reflection High Energy Diffraction Patterns." K.Iwata, H.Asahi, S.J.Yu, K.Asami, H.Fujita, M.Fushida and S.Gonda Jpn.J.Appl.Phys., 35, pp.L289-L292.、1996/05

4) "Gas source Molecular Beam Epitaxy growth of GaN1-xPx(x<0.015) using Ion-Removed Electron Cyclotron Resonance radical cell." K.Iwata, H.Asahi, K.Asami and S.Gonda Jpn.J.Appl.Phys., 35 , pp.L1634-L1637.、1996/09

5) "Gas source Molecular Beam Epitaxy growth of GaN rich side of GaN1-xPx using Ion-Removed Electron Cyclotron Resonance radical cell." K.Iwata, H.Asahi, K.Asami and S.Gonda J. Crystal Growth, 175, pp.150-155.、1997/06

6) "Gas Source Molecular Beam Epitaxy Growth of GaN on C-,A-,R-,M-plane Sapphire and Silica Glass Substrate." K.Iwata, H.Asahi, K.Asami and S.Gonda Jpn.J.Appl.Phys., 36 , pp.L661-L664.、1997/09

7) Strong photoluminescence emission from GaN grown on amorphous silica substrates by gas source MBE.，K.Iwata, H.Asahi, K.Asami, R.Kuroiwa and S.Gonda，Journal of Crystal Growth，Vol.188(1998)pp.98-102-，pp.-、1998/06

8) GaN-rich side of GaNAs grown by gas source MBE.，K.Iwata, H.Asahi, K.Asami, R.Kuroiwa and S.Gonda，Japanese Journal of Applied Physics，Vol.37(3B)(1998)pp.1436-1439，1998.、1998/07

9) Strong photoluminescence emission from GaN grown on amorphous silica substrates by gas source MBE. K.Iwata, H. Asahi, K. Asami, R. Kuroiwa and S. Gonda J. Crystal Growth, Vol.188, pp.98-102.、1998/07

10) GaN-rich side of GaNAs grown by gas source MBE. K.Iwata, H. Asahi, K. Asami, R. Kuroiwa and S. Gonda Jpn.J.Appl.Phys., Vol.37(3B), pp.1436-1439.、1998/09

11) Promising characteristics of GaN grown on amorphous silica substrates by gas source MBE.，K.Iwata, H.Asahi, K.Asami, R.Kuroiwa and S.Gonda，Journal of Crystal Growth，Vol.189,pp.218-222,1998.、1998/10

12) Promising characteristics of GaN grown on amorphous silica substrates by gas source MBE. K.Iwata, H. Asahi, K. Asami, R. Kuroiwa, H. Tampo and S. Gonda J. Crystal Growth, Vol.189 , pp.218-222.、1998/11

13) Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE，K.Iwata, P.Fons, A.Yamada, K.Matsubara and S.Niki，Journal of crystal growth，209 (2000) 526-531，2000.、1999/04

14) "Nitrogen induced defects in ZnO:N grown on sapphire substrate by gas source MBE." K.Iwata, P.Fons, S.Niki, A.Yamada, K.Matsubara and M. Watanabe J. Crystal Growth, 209, pp.526-531.、2000/02

15) Improvement of Electrical Properties in ZnO Thin Films Grown by Radical source(RS)-MBE.，K.Iwata, P.Fons, A.Yamada, K.Matsubara and S.Niki，Physica Status Solidi (a)，Vol.180, No.1, p.287-，pp.-、2000/07

16) "ZnO growth on Si by radical source MBE." K.Iwata, P.Fons, A.Yamada, K.Matsubara and S.Niki J. Crystal Growth , 214/215, pp.50-54.、2000/07

17) Improved electrical properties in ZnO semiconductor films grown by radical source MBE.，K.Iwata, P.Fons, A.Yamada, K.Matsubara and S.Niki，THE MATERIALS RESEARCH SOCIETY OF JAPAN SYMPOSIUM EXTENDED ABSTRACT，Vol.12, p.133-，pp.-、2000/12

18) "Improvement of Electrical Properties in ZnO Thin Films Grown by Radical source(RS)-MBE." K.Iwata, P.Fons, A.Yamada, K.Matsubara, K. Nakahara, H. Takasu and S.Niki Physica Status Solidi (a) , Vol.180, No.1, p.287.、2000/12

19) Improved Electrical Properties in ZnO Semiconductor Films Grown by Radical Source MBE，K.Iwata, P.Fons, A.Yamada, K.Matsubara and S.Niki，TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN，26-3，pp.993-996、2001/09

20) Bandgap engineering of ZnO using Se，K.Iwata, P.Fons, A.Yamada, K.Matsubara and S.Niki，PHYSICA STATUS SOLIDI B-BASIC RESEARCH，229-，pp.887-890、2002/01

21) Natural ordering of ZnOSe grown by radical source MBE，K.Iwata, P.Fons, A.Yamada, K.Matsubara and S.Niki，JOURNAL OF CRYSTAL GROWTH，251-，pp.633-637、2003/04

22) Material properties of ZnO thin film for photovoltaic devices grown by URT-IP method，K.Iwata, P.Fons, A.Yamada, K.Matsubara and S.Niki，THIN SOLID FILMS，445-，pp.274-277、2003/12

23) Doping properties of ZnO thin film for photovoltaic devices grown by URT-IP method，K.Iwata, P.Fons, A.Yamada, K.Matsubara and S.Niki，THIN SOLID FILMS，451-452-，pp.219-223、2004/03

24) Growth of ZnO and device application，K.Iwata, P.Fons, A.Yamada, K.Matsubara and S.Niki，APPLIED SURFACE SCIENCE，244-4，pp.504-510、2005/04

25) Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)，K.Iwata, P.Fons, A.Yamada, K.Matsubara and S.Niki，THIN SOLID FILMS，480-481-，pp.199-203、2005/04

26) Aerial Robotic System for Transportation and Logistics，K.Iwata, et al.，Journal of Mechanical Systems for Transportation and Logistics（JMTL），1-1，pp.146-157、2008/05

27) Turbojet Engine for Aerial Cargo Robot (ACR)，K.Iwata, et al.，Journal of Robotics and Mechatronics，24-6，pp.1040-1045、2012/12

28) Research of Cargo UAV for civil transportation，K.Iwata, et al.，Journal of Unmanned System Technology (JUST)，1-3，pp.89-93、2013/12

29) Aerial Cargo Robot (Cargo UAV)，K.Iwata, et al.，Journal of Robotics and Mechatronics，26-3，pp.394-395、2014/06

30) SAFETY FLIGHT TESTING FOR CARGO UAV DEVELOPMENT，K.Iwata, et al.，Proceedings of ICAS2018，31-1，pp.754-762、2018/09

31) Research of Verification of Limit for Industrial Solid Wing UAV，K.Iwata, et al.，International Journal of Intelligent Unmanned Systems (IJIUS)，22-1，pp.67-73、2022/08

 

2. Links
Cargo UAV Research

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