My Research and Inventions

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Contact:


Dr. Vadym Zayets


Photonics Systems Group,

Research Institute for Advanced Electronics and Photonics,

National Institute of Advanced Industrial Science and Technology (AIST),

Central 2-1, Room D811,
Umezono 1-1-4, Tsukuba,
Ibaraki-ken 305-8568, Japan.

 

tel: +81-298-61-5426


email:
v.zayets (at symbol)gmail.com
v.zayets (at symbol)aist.go.jp
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Content

all pages of web site of Vadym Zayets


 


 

Parts of Content

(part 1): Basic Spin Properties of electrons

Landau -Lifshitz Eq.; Spin-orbit interaction; Exchange interaction; Magneto-optics vs. spin; spin vs. orbital moment; What is a hole?; e-Drugs (Electronic drugs). PMA sensor.

(part 2) Spin Properties of gas of conduction electrons

Spin-polarized/ unpolarized electrons; Spin statistics; Spin Distribution of Conduction electron;. Electron gas of conduction electrons in Magnetic Field Pauli paramagnetism; conduction electrons in a ferromagentic metal

(part 3) Spin Transport

Transport Eqs.; Spin Proximity/ Spin Injection; Spin Detection; Boltzmann Eqs.; Mean-free path; Current near Interface; Non-local Spin Detection; Thermally-activated magnetization switching, Coercive field; Voltage- controlled magnetism (VCMA effect); ll-metal transistor Spin-orbit torque (SOT effect);

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(part 4) Current- induced magnetization reversal

. Iteraction of groups of conduction electrons of different spin polarization; Spin-Torque Current. Spin-Transfer Torque; All-metal transistor; Spin-orbit torque (SOT effect); Voltage- controlled magnetism (VCMA effect); Parametric mechanism of Magnetization Reversal.

(part 5) Family of Magneto- transport effects

: Hall effect, Ordinary Hall effect; Anomalous Hall effect (AHE) Anisotropic magnetoresistance (AMR) and Planar Hall effect (making); Spin Hall effect; Inverse Spin Hall effect; Giant magnetic Resistance (GMR) effect. Spin- Dependent Conductivity;. Tunnel Magnetic Resistance (TMR).;Magnetic Tunnel Junction (MTJ) ; MgO-based MTJ; C

(part 6) high- precision measurement method of magnetic and magneto- transport properties of nanomagnets

Access to all my experimental data of nanomagnet measurement; Measurement of Inverse Spin Hall effect (ISHE); Measurement of spin polarization; Measurement of Coercive field, Retention time. parameter Δ , size of nucleation domain; RF measurements of magneto-transport effect;s Measurement of SOT-type in- plane magnetic field: " field- like torque" + "damp- like torque"; Measurement of Anisotropy field; Explaination of my EB nanotechnology;Access to Reticle data

(part 7) old model of spin-up/down bands for the spin transport

(The applications of this model are limited, because this model has some incorrect assumption)

(part 8) High- speed optical memory

Applications; Operational principal; High-speed demultiplexing experiment; Reading method; High-Speed Spin Injection; Spin-photon memory with MTJ; Fabrication Technology; EB nano fabrication; Reticle 10 data

(part 9) Magneto-optical effect

Optical isolator Faraday rotation angle MCD Measurement of Isolation Kerr rotation High-precision measurement of non-linear refractive index and non-linear optical absorption Origin of Magneto-optics

(part10) Transverse Magneto-Optical effect

Experimental observation of transverse MO effect; Properties of transverse MO effect; Origin of transverse MO effect; Transverse Ellipticity; Two contributions to transverse MO effect; Magnetization-dependent optical loss; Calculations of transverse MO effect in the case of multilayer structure; Optical excitation of spin-polarized electrons utilizing transverse MO; Plasmons; Giant Enhancement of Transverse MO effect

(part 11) Si Photonics. Plasmonic.

Plasmonic isolator; Plasmonic modulator; Si nanowire fabrication technology; Si Photonics; Directional coupler; Integration of plasmonic + Si waveguides; ; III-V plasmonic;
Download programs (Open Source & free), which are made by Vadym Zayets

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Basic Spin Properties of electrons

True Science always finds the way

 

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Basic properties of electron spin. Spinors.Spin in a magnetic field

Spin Precession. Precession Damping. Landau -Lifshitz equation

What is the Spin?

Spin-Orbit interaction

Exchange interaction

sp-d exchange interaction

Perpendicular magnetic anisotropy (PMA)

e-Drugs (Electronic drugs). PMA sensor.

What is a hole?

Magneto-optics & Electron Spin

Spin vs Orbital moment

Spin vs. Orbital moment in a solid. Quenching of orbital moment

Thermally-activated magnetization switching. Coercive field. Retention time. Δ

Heating of a ferromagnet. Curie–Weiss law. Curie Temperature

All-optical magnetization switching

 

Spin Properties of gas of conduction electrons

Spin-polarized/ unpolarized electrons

Spin-dependent Scatterings between conduction electrons

Spin statistics. Spin Distribution of Conduction electrons. Fermi-Dirac Energy distribution.

Electron gas of conduction electrons in Magnetic Field

Pauli paramagnetism. Pauli and Stoner models. Features and limitations.

model comparison for spin distribution of the conduction electrons

Questions 1 & Answers (very old)

Introduction (very old)

Questions 2 & Answers (very old)

 

 

 

 

Doing the Science has never been easy

In contrast, the production of fakes in a larger numbers is much easier

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Spin Transport

Introduction

Transport Eqs.

Spin Proximity/ Spin Injection

Spin Detection

Boltzmann Eqs.

Electrical current. Non-magnetic material (New)

Electrical current. Magnetic material

Scattering current

Mean-free path

Current near Interface

Non-local Spin Detection

 

 

 

 


Current- induced magnetization reversal

 

 

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Spin rotation of gas of conduction electrons

Spin Torque for Conduction electrons. Iteraction of groups of conduction electrons of different spin polarization

Spin-Torque Current.

Spin-Transfer Torque

 

All-metal transistor

Spin-orbit torque (SOT effect)

Voltage- controlled magnetism (VCMA effect)

 

Parametric mechanism of Magnetization Reversal.

Parametric mechanism of Magnetization Reversal. Part.1: General.

Parametric mechanism of Magnetization Reversal. Part 2. Parametric parameter : Current- induced magnetic field.

Parametric mechanism of Magnetization Reversal. Part 3. Parametric parameter: Anisotropy field.

Parametric mechanism of Magnetization Reversal. Part 4. Parametric parameter: Spin Injection

 

 

 


Family of Magneto- transport effects: Hall effect, AMR, spin-dependent conductivity

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Family of Hall and AMR effects

Ordinary Hall effect

Anomalous Hall effect (AHE) (making)

Anisotropic magnetoresistance (AMR) and Planar Hall effect (making)

Spin Hall effect (making)

Inverse Spin Hall effect (making)

Giant magnetic Resistance (GMR) effect. Spin- Dependent Conductivity. (making)

Tunnel Magnetic Resistance (TMR). Magnetic Tunnel Junction (MTJ) (making)

MgO-based MTJ

Charge accumulation at MTJ, at a contact between two metals

 


high- precision measurement method of magnetic and magneto- transport properties of nanomagnets

Spin Precession

The spin can be only in one of 3 possible states: (state 1) spin-up (spin is along magnetic field); (state 2) spin-down (spin is opposite to magnetic field); (state 3) spin-precession. There is no possible spin state, in which the spin is simply tilted with respect to a magnetic field.
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All measurement Data . Properties of FeCoB nanomagnets

Measurement methods of Magnetic properties of nanomagnets.

Measurement of Inverse Spin Hall effect (ISHE). Measurement of spin polarization

Measurement of Coercive field, Retention time. parameter Δ , size of nucleation domain

RF measurements of magneto-transport effects

Measurement of SOT-type in- plane magnetic field: " field- like torque" + "damp- like torque"

Measurement of Anisotropy field

EB nanotechnology

Reticle 11

 

 

 

 


old model of spin-up/down bands of the spin transport

(The applications of this model are limited, because this model has some incorrect assumption)

 

Introduction

Basic Transport equations

Spin and charge currents

Spin drain

Non-magnetic metals

Ferromagnetic metals

Semiconductors (Basic)

Threshold spin current

Spin gain/damping

Spin Relaxation

Spin Hall/ Inverse Spin Hall effects

ee- interaction


High- speed optical memory

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This topic is about my development of high-speed non-volatile optical memory

Introduction

Applications

Operational principal

High-speed demultiplexing experiment

Reading

High-Speed Spin Injection

Spin-photon memory with MTJ

Fabrication Technology

EB nano fabrication

Reticle 10

Differential modulator

All-optical magnetization switching

 

 


Magneto-optical effect

 

Optical isolator

Faraday rotation angle

MCD

Measurement of Isolation

Kerr rotation

High-precision measurement of non-linear refractive index and non-linear optical absorption

Origin of Magneto-optics

 

Optical isolator blocks back propagating light
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Transverse Magneto-Optical effect

Introduction

Experimental observation of transverse MO effect

Properties of transverse MO effect

Origin of transverse MO effect

Transverse Ellipticity

Two contributions to transverse MO effect

Magnetization-dependent optical loss

Calculations of transverse MO effect in the case of multilayer structure

Optical excitation of spin-polarized electrons utilizing transverse MO

Plasmons

Giant Enhancement of Transverse MO effect

History and Future

 

 

 

 

 


Silicon Photonics. Plasmonic

Plasmonic modulator (Au/EO polymer/ITO) integrated with Si nanowire waveguides. Lensed optical fibers couple light in and out of Si nanowire waveguides.
Nano oscillations (~30 nm) of fibers make undesirable noise in experiment.
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Si nanowire waveguide

Si nanowire waveguide. Basic properties.

Si nanowire fabrication technology

fiber/waveguide coupling setup

devices made of Si-waveguides

directional coupler

AlGAAs passive waveguide

AlGaAs waveguide (800 nm)

AlGaAs waveguide (1550 nm)

Plasmonic isolator
 
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Plasmonic

Plasmonic. Introduction

Misconception about “plasmonic- friendly” and “plasmonic- unfriendly” metal material

integration: plasmonic + Si waveguides

Comparison of two technologies of Integration of Si nanowire waveguide and plasmonic waveguide

Out-plane plasmonic confinement

plasmonic isolator

III-V plasmonic

plasmonic on GaAs (800 nm)

plasmonic on GaAs (1550 nm)

plasmonic on Si (1550 nm)

plasmons in metal strip

in-plane confinement of plasmons

samples very old


 

 

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I will try to answer your questions as soon as possible

 

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