# Papers # [Jpn-Home] [Eng-Home]

# Japanse Articles (Click me.)


Papers with an emphisized font type are selected ones in terms of physical interests and technological importance.
  1. S. Hara and I. Ohdomari, "Chemical trend in silicide electronic structure and Schottky-barrier heights of silicide-silicon interfaces," Phys.Rev. B38(11), 7554-7557 (Oct., 1988). [PDF] (392kB)

  2. S. Hara, K. Suzuki, A. Furuya, Y. Matsui, T. Ueno, I. Ohdomari, S. Misawa, E. Sakuma, S. Yoshida, Y. Ueda, and S. Suzuki, "Solid state reaction of Mo on cubic and hexagonal SiC," Jpn.J.Appl.Phys. 29(3). L394-397 (March, 1990). [PDF] (902kB)

  3. S. Hara, W.F.J. Slijkerman, J.F. van der Veen, I. Ohdomari, S. Misawa, E. Sakuma, and S. Yoshida, "Elemental composition of β-SiC(001) surface phases studied by medium energy ion scattering," Surf.Sci. 231(1/2), L196-200 (May, 1990). [PDF](1.1MB)

  4. S. Hara, Y. Aoyagi, M. Kawai, S. Misawa, E. Sakuma, and S. Yoshida, "Self-limiting growth on the β-SiC(001) surface," Surf.Sci. 273(3), 437-441 (1992).

  5. S. Hara, Y. Aoyagi, M. Kawai, S. Misawa, E. Sakuma, and S. Yoshida, "Si desorption from a β-SiC(001) surface by an oxygen flux," Surf.Sci. 278(1/2), L141-146 (Nov., 1992).

  6. S. Hara, Y. Aoyagi, M. Kawai, S. Misawa, E. Sakuma, and S. Yoshida, "Atomic layer control of β-SiC(001) surface," in "Amorphous and Crystalline Silicon Carbide IV," eds. C.Y.Yang, M.M.Rahman, and G.L.Harris, 90-95 (Springer Proceedings in Physics, Vol. 71, 1992).

  7. S. Hara, Y. Aoyagi, M. Kawai, S. Misawa, and S. Yoshida, "Surface atomic structure and atomic layer control of cubic silicon carbide," 11th Record of Alloy Semiconductor Physics and Electronics Symposium, 147-150 (July, 1992).

  8. S. Hara, T. Meguro, Y. Aoyagi, M. Kawai, S. Misawa, E. Sakuma, and S.Y oshida, "Microscopic mechanisms of accurate layer by layer growth of β-SiC," Thin Solid Films 225(1/2), 240-243 (March, 1993).

  9. S. Hara, S. Misawa, S. Yoshida, and Y. Aoyagi, "Additional dimer row structure of 3C-SiC(001) surfaces observed by scanning tunneling microscopy," Phys.Rev. B50(7), 4548-4553 (Aug., 1994). [PDF] (603kB)

  10. S. Hara, S. Misawa, S. Yoshida, and Y. Aoyagi, "STM study of Si-rich reconstructions o 3C-SiC(001) surface," in "Silicon Carbide and Related Materials," Institute of Physics Conference Series no. 137, eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Khan, R. Kaplan, and M. Rahman, 177-180 (IOP Publishing, UK, 1994),

  11. S. Hara, S. Misawa, S. Yoshida, and Y. Aoyagi, "Additional dimer-row structure of 3C-SiC(001) surfaces," RIKEN review, 7, 9 (Oct., 1994).

  12. S. Hara, J. Kitamura, H. Okushi, S. Yoshida, S. Misawa, and Y. Tokumaru, "Space Fluctuation of Empty State of 3C-SiC(001) surface," Record of 14th Electronic Materilas Symposium (EMS'95), p169-170 (July, 1995).

  13. S. Hara, J. Kitamura, H. Okushi, S. Misawa, S. Yoshida, and Y. Tokumaru, "Space Fluctuation of empty states on 3C-SiC(001) surface," Surf.Sci. 357(1)-358(3), 436-440 (1996). [PDF] (381kB)

  14. S. Hara, T. Teraji, H. Okushi, and K. Kajimura, "Pinning-Controlled Ohmic Contacts: application to SiC(0001)," Appl.Surf.Sci. 107, 218-221 (1996). [PDF] (280kB)

  15. S. Hara, J. Kitamura, H. Okushi, S. Misawa, S. Yoshida, and Y. Tokumaru, "Spectroscopy of 3C-SiC(001) surface by scanning tunneling microscopy," Silicon Carbide and Related Materials 1995, 481-484 (Inst.Phys.Conf.Ser. no142, IOP Publishing, UK, 1996).

  16. T. Teraji, S. Hara, H. Okushi, and K. Kajimura, "Ti Ohmic contact without post-annealing process to n-type 6H-SiC," Silicon Carbide and Related Materials 1995, 593-596 (Inst.Phys.Conf.Ser. no142, IOP Publishing, UK, 1996).

  17. S. Hara, T. Teraji, H. Okushi, and K. Kajimura, "Pinning-Controlled Metal/Semiconductor Interfaces," 3rd International Conference on Intelligent Materials/3rd European Conference on Smart Structures and Materials, third international conference on intelligent materials - third european conference on smart structures and materials, 802-806 (Lyon, France, June 3-5, 1996).

  18. T. Teraji, S. Hara, H. Okushi, and K. Kajimura, "Pinning-released Ohmic contacts to 6H-SiC," Record of 15th Electronic Materilas Symposium (EMS'96), p155-158 (July, 1996).

  19. K. Kajimura, S. Hara, K. Hayashi, and H. Okushi, "Wide gap semiconducting materials superior to silicon," Materials and Measurements in Molecular Electronics, eds. K. Kajimura and S. Kuroda, 3-18 (Springer Proceedings in Physics. Vol. 81, 1996).

  20. T. Teraji, S. Hara, H. Okushi, and K. Kajimura, "Formation of Ohmic contact to 6H-SiC without post-annealing," Proceedings for the 14th symposium on materials science and engineering research center of ion beam technology, 155-158 (Hosei Univ, 1996).

  21. T. Teraji, S. Hara, H. Okushi, and K. Kajimura, "Ohmic contacts to n-type 6H-SiC without post-annealing," the MRS Symposium Proceedings Series, eds. D.K.G askill, C.D. Brandt, and R.J. Nemanich, 423, 149-154 (1996 MRS Spring Meeting, San Francisco, USA, 1996).

  22. S. Hara, T. Teraji, H. Okushi, and K. Kajimura, "New technique for Ohmic formation," the MRS Symposium Proceedings Series, eds. K.N.Tu, J.W. Mayer, J.M. Poate, and L.J. Chen, 427, 159-164 (1996 MRS Spring Meeting, San Francisco, USA, 1996).

  23. S. Hara, T. Teraji, H. Okushi, and K. Kajimura, "Control of Schottky and Ohmic Interfaces by Unpinning Fermi Level," Appl.Surf.Sci, 117/118, 394-399 (1997). [PDF] (179kB)

  24. T. Teraji, S. Hara, H. Okushi, and K. Kajimura, "Ideal Ohmic Contacts on 6H-SiC(0001) crystal by reducing Schottky Barrier Height," Appl.Phys.Lett., 71, 689-691 (1997). [PDF] (387kB)

  25. H.W. Yeom, Y.-C. Chao, S. Terada, S. Hara, S. Yoshida, and R.I.G. Uhrberg, "Surface core levels of the 3C-SiC(001)3×2 surface: Atomic origins and surface reconstruction," Phys.Rev. B56(24), R15525-15528 (1997). [PDF] (110kB)

  26. H. Watanabe, D. Takeuchi, S. Hara, T. Sekiguchi, H. Okushi, and K. Kajimura, "Role of hydrogen in homoepitaxial diamond film growth," Diamond Films and Tech. 7, 277-280 (1997).

  27. D. Takeuchi, H. Watanabe, S. Yamanaka, S. Masai, S. Kawada, S. Hara, T. Sekiguchi, H. Okushi, and K. Kajimura, "Cathodoluminescence and Schottky characteristics of homoepitaxial diamond thin films synthesized by microwave plasma-enhanced CVD using an end-launch-type reactor," Diamond Films and Tech. 7, 347-350 (1997).

  28. H.W. Yeom, Y.-C. Chao, I. Matsuda, S. Hara, S. Yoshida, and R.I.G. Uhrberg, "Electronic structure of the Si-rich 3C-SiC(001)3×2 surface," Phys.Rev. B58, 10540-10550. (1998) [PDF] (3.6MB)

  29. M. Takai, S. Hara, T. Teraji, and H. Okushi, "Control of electrical properties of Al/Si(111) interface by NH4F solution without dissolved oxygen," Proceedings of Forth International Conference on Intelligent Materials 320-321 (Makuhari, Chiba, October 1998).

  30. S. Hara, J. Kitamura, H. Okushi, S. Misawa, S. Yoshida, K. Kajimura, H.W. Yeom, and R.I.G. Uhrberg, "Perfect cellular disorder in a two-dimensional system: Si cells on the 3C-SiC(001) surface," Surf.Sci.Lett. 421, L143-L149 (1999). [PDF](533kB)

  31. H.W. Yeom, M. Shimomura, J. Kitamura, S. Hara, K. Tono, I. Matsuda, B.S. Mun, W.A.R. Huff, S. Kono, T. Ohta, S. Yoshida, H. Okushi, K. Kajimura, and C.S. Fadley, "Atomic and Electronic-Band Structures of Anomalous Carbon Dimers on the 3C-SiC(001)-c(2×2) surface, " Phys.Rev.Lett. 83. 1640-1643 (1999). [PDF](822kB)

  32. H.W. Yeom, Y.-C. Chao, S. Terada, S. Hara, S. Yoshida and R.I.G. Uhrberg, "Surface reconstructions of 3C-SiC(001) studied by high-resolution core-level photoemission," Surf.Sci. 433, 392-396 (1999). [PDF](133kB)

  33. J. Kitamura, S. Hara, H. Okushi, S. Yoshida, S. Misawa, and K. Kajimura, "Si-adsorption induced phase transition on the 3C-SiC(001) surface," Surf.Sci. 433, 465-469 (1999). [PDF](358kB)

  34. M. Shimomura, H.W. Yeom, B.S. Mun, C.S. Fadley, S. Hara, S. Yoshida, and S. Kono, "Surface-core-level-shift photoelectron diffraction study of β-SiC(001)-c(2×2) surface," Surf.Sci. 438, 237-241 (1999). [PDF] (157kB)

  35. L. Duda, L.S.O. Johansson, B. Reihl, H.W. Yeom, S. Hara, and S. Yoshida, "Electronic structure of the 3C-SiC(001)2×1 surface studied with Angle-Resolved Photoelectron Spectroscopy," Surf.Sci. 439, 199-210 (1999). [PDF] (544kB)

  36. L. Duda, L.S.O. Johansson, B. Reihl, H.W. Yeom, S. Hara, and S. Yoshida, "Angle-resolved photoemission studies of the 3C-SiC(001)2×1 surface," Surf.Rev.Lett. 6, 1151-1157 (1999). [PDF] (421kB)

  37. Xu-Qiang Shen, T. Ide, SH. Cho, M. Shimizu, S. Hara, H. Okumura, S. Sonoda, and S. Shimizu, "Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy," Jpn.J.Appl.Phys. 39, L16-L18 (2000). [PDF] (41kB)

  38. S. Sonoda, S. Shimizu, XQ. Shen, S. Hara, H. Okumura, "Characterization of polarity of wurtzite GaN film grown by molecular beam epitaxy using NH3," Jpn.J.Appl.Phys. 39, L202-L204 (2000). [PDF] (73kB)

  39. L. Duda, L.S.O. Johansson, B. Reihl, H.W. Yeom, S. Hara, and S. Yoshida, "Surface states of the 3C-SiC(001)-c(4×2) surface studied with angle-resolved photoemission," Phys.Rev. B61, R2460-R2463 (2000). [PDF] (147kB)

  40. H.W. Yeom, I. Matsuda, Y.-C. Chao, S. Hara, S. Yoshida, and R.I.G. Uhrberg, "Hydrogen-induced 3x1 phase of the Si-rich 3C-SiC(001) surface," Phys.Rev. B61, R2417-R2420 (2000). [PDF] (475kB)

  41. S. Hara, "Characterization of the 6H-SiC(0001) surface and the interface with Ti layer with the Schottky limit," Appl.Surf.Sci. 162/163, 19-24 (2000). [PDF] (615kB)

  42. S. Hara, J. Kitamura, H. Okushi, S. Yoshida, K. Kajimura, and H.W. Yeom, "Comment on "Carbon Atomic Chain Formation on the β-SiC(100) Surface by Controlled spsp3 Transformation," Phys.Rev.Lett. 85, C2649 (2000). [PDF] (169kB)

  43. Y. Sugawara, N. Shibata, S. Hara, and Y. Ikuhara, "Interface structure of fcc-Ti thin film grown on 6H-SiC substrate," J.Mat.Research. 15, 2121-2124 (2000). [PDF] (251kB)

  44. Xu-Qiang Shen, T. Ide, S.H. Cho, M. Shimizu, S. Hara, H. Okumura, S. Sonoda, and S. Shimizu, "Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy," J.Crystal Growth, 218, 155-160 (2000). [PDF] (253kB)

  45. T. Ide, M. Shimizu, X.Q. Shen, S. Hara, H. Okumura, T. Nemoto, "Achievement of MBE-grown GaN heteroepitaxial layer with (0001) Ga-polarity and improved quality by In exposure," SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 Eds. C. H. Carter, R. P. Devaty, G. S. Rohrer, MATERIALS SCIENCE FORUM, 338-3, 1459-1462 (2000).

  46. Xu-Qiang Shen, T. Ide, S.H. Cho, M. Shimizu, S. Hara, H. Okumura, S. Sonoda, and S. Shimizu, "Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy," Jpn.J.Appl.Phys. 39, L1270-L1272 (2000). [PDF] (118kB)

  47. Xu-Qiang Shen, T. Ide, S.H. Cho, M. Shimizu, S. Hara, H. Okumura, "Stability of N- and Ga-polarity GaN surfaces during the growth interruption studied by reflection high-energy electron diffraction," Appl.Phys.Lett. , 77, 4013-4015 (2000). [PDF] (264kB)

  48. Xu-Qiang Shen, T. Ide, S.H. Cho, M. Shimizu, S. Hara, and H. Okumura, "Achievements and characterizations of GaN films with Ga-polarity in radio-frequency plasma-assisted molecular beam epitaxy," Mater.Res.Soc.Symp., 622, T6.22.1 (2000). [PDF] (41kB)

  49. Xu-Qiang Shen, T. Ide, S.H. Cho, M. Shimizu, S. Hara, H. Okumura, S. Sonoda, and S. Shimizu, "Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Diffraction Patterns," Jpn.J.Appl.Phys. 40, L23-L25 (2001). [PDF] (49kB)

  50. S.M. Widstrand, L.S.O. Johansson, K.O. Magnusson, M.I. Larsson, H.W. Yeom, S. Hara, and S. Yoshida, "Angle-resolved photoemission study of the hydrogenated 3C-SiC(001)-2×1-H surface, " Surf.Sci. 479, 247-254 (2001). [PDF] (314kB)

  51. S. Hara, "The Schottky limit and a charge neutrality level found on metal/6H-SiC interfaces," Surf.Sci.Lett. 494, L805-L810 (2001). [PDF] (249kB)

  52. T. Teraji and S. Hara, "Control of interface states at metal/6H-SiC(0001) interfaces," Phys.Rev. B70, 035312 (2004). (19 pages) [PDF] (APS version 1.0MB), or [PDF] (version with high-quality images 6.3MB)

  53. N. Li, H. Habuka, S. Ikeda, and S. Hara, "Silicon chemical vapor deposition process using a half-inch silicon wafer for Minimal Manufacturing System," Physics Procedia 46, 230-238 (2013). [PDF] (686kB)

  54. S. Khumpuang, S. Maekawa, and S. Hara, "Photolithography for Minimal Fab System," IEEJ Transactions on sensors and micromachines,133, 272-277 (2013). [PDF] (1.98MB)

  55. S. Khumpuang and S. Hara, "A MOSFET Fabrication Using a Maskless Lithography System in Clean-Localized Environment of Minimal Fab," IEEE Transactions on Semiconductor Manufacturing, 28(3), 393-398 (2015).

[Jpn-Home] [Eng-Home]
Last updated: Aug 9, 2015. Shiro HARA's Web Site