Wide-Bandgap Semiconductors

  In light of the trend of moving to higher storage densities, it is clear that more effort must be expended to develop shorter wavelength optoelectronic devices. We are applying our efforts to the developement of wide-bandgap oxide semiconductors such as ZnO (shown right).
ZnO has a room temperature bandgap of approximately 3.4 eV and can be allowed with Mg for bandgap engineering purposes. We are growing ZnO by both molecular beam epitaxy and laser ablation.  Outstanding problems include p-type doping as well as optimization of device structures. We are growing ZnO on a-sapphire substrates.

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