E-mail：k-nishio[*]aist.go.jp（[*]を@に変更して使用してください。）
- ２００４年３月 博士（理学）（慶應義塾大学）
- ２００４年４月 産業技術総合研究所 特別研究員
- ２００６年４月 産業技術総合研究所 研究員
- ２０１３年３月 産業技術総合研究所 主任研究員
１．最近の研究
"Liquidus curve of a Lennard-Jones mixture",
K. Nishio,
Phys. Rev. E 109 (2024) 044110.
"Unveiling a medium-range structural commonality of amorphous alloys",
K. Nishio, A. K. A. Lu,
J. Non-Cryst. Solids 624 (2024) 122696.
２．原子配列分類ソフトウェア
"Vorotis",
DOI 10.5281/zenodo.6069725.
"Vorotis: Software for Voronoi tessellation analysis using the polyhedron code",
K. Nishio,
Comput. Phys. Commun. 278 (2022) 108418.
３．原子配列分類法
"Cluster classification by chemi-topology",
K. Nishio,
Comput. Phys. Commun. 286 (2023) 108659.
"Notation for chemical arrangements in alloys",
K. Nishio, T. Miyazaki,
Phys. Rev. Research 2 (2020) 023193.
"Describing polyhedral tilings and higher dimensional polytopes by sequence of their two-dimensional components",
K. Nishio, T. Miyazaki,
Sci. Rep. 7 (2017) 40269.
"How to describe disordered structures", K. Nishio, T. Miyazaki,
Sci. Rep. 6 (2016) 23455.
４．アモルファス材料
"Liquidus curve of a Lennard-Jones mixture",
K. Nishio,
Phys. Rev. E 109 (2024) 044110.
"Unveiling a medium-range structural commonality of amorphous alloys",
K. Nishio, A. K. A. Lu,
J. Non-Cryst. Solids 624 (2024) 122696.
"Can every substance exist as an amorphous solid?",
K. Nishio, A. K. A. Lu,
J. Non-Cryst. Solids 576 (2022) 121254.
"Frank-Kasper Z16 local structures in Cu-Zr metallic glasses",
A. K. A. Lu, K. Nishio, T. Morishita, K. Ohara, Z. Lu, and A. Hirata,
Phys. Rev. B 102, (2020) 184201.
"Universal short-range order and material dependent glass-forming ability of metallic liquids and glasses",
K. Nishio, A. K. A. Lu, T. Miyazaki,
Phys. Rev. Research 1, (2019) 012013(R).
"Entropy-driven docosahedral short-range order in simple liquids and glasses",
K. Nishio, A. K. A. Lu, T. Miyazaki,
Phys. Rev. E 99, (2019) 022121.
"Universal Medium-Range Order of Amorphous Metal Oxides",
K. Nishio, T. Miyazaki, H. Nakamura,
Phys. Rev. Lett. 111, (2013) 155502.
"Theoretical study of light-emission properties of amorphous silicon quantum dots",
K. Nishio, J. Kōga, T. Yamaguchi, and F. Yonezawa,
Phys. Rev. B 67, (2003) 195304.
５．半導体材料
"GaN/SiO2 interface that does not create states within the band gap: A theoretical prediction",
K. Nishio, T. Miyazaki, M. Shimizu,
Phys. Rev. Materials 5, (2021) 104601.
"Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface",
K. Nishio, T. Yayama, T. Miyazaki, N. Taoka, M. Shimizu,
Sci. Rep. 8, (2018) 1391.
"Low-strain Si/O superlattices with tunable electronic properties: Ab initio calculations",
K. Nishio, A. K. A. Lu, G. Pourtois,
Phys. Rev. B 91, (2015) 165303.